FQA11N90C_F109 Fairchild Semiconductor, FQA11N90C_F109 Datasheet - Page 4

• Manufacturer Part Number: FQA11N90C_F109
• Description: MOSFET N-CH 900V 11A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA11N90C_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA11N90C_F109 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-1
-2
-100
2
1
0
10
0
vs. Temperature
-50
T
V
J
DS
1 0
1 0
, Junction Temperature [
10
, Drain-Source Voltage [V]
1
0
-1
-2
※
1 0
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
Notes :
-5
C
J
= 150
0 .0 5
0 .0 2
= 25
0 .0 1
D = 0 .5
0 .1
0 .2
o
C
o
C
50
DS(on)
1 0
DC
10
-4
2
s in g le p u ls e
10 ms
100
t
o
1
C]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 ms
※
1. V
2. I
Notes :
D
100
GS
= 250 µA
150
= 0 V
10
µ
1 0
s
µ
- 3
s
10
3
(Continued)
200
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
8
6
4
2
0
-100
25
※
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
vs. Temperature
N o t e s :
-1
P
vs. Case Temperature
θ J C
J M
DM
- T
( t) = 0 . 4 2
-50
C
50
= P
t
1
D M
t
T
2
1 0
J
℃
* Z
T
, Junction Temperature [
C
0
0
/W M a x .
1
, Case Temperature [ ]
/t
θ J C
2
( t)
75
50
1 0
1
100
100
℃
o
C]
※
125
1. V
2. I
www.fairchildsemi.com
Notes :
150
D
GS
= 5.5 A
= 10 V
200
150