IRFU110 Vishay, IRFU110 Datasheet
IRFU110
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IRFU110 Summary of contents
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... S N-Channel MOSFET IPAK (TO-251) SiHFU110-GE3 IRFU110PbF SiHFU110-E3 IRFU110 SiHFU110 = 25 °C, unless otherwise noted ° 100 ° °C C for 4.3 A (see fig. 12 150 °C. J IRFU110, SiHFU110 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 2.5 ...
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... IRFU110, SiHFU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91397 S10-2549-Rev. C, 08-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFU110, SiHFU110 Vishay Siliconix www.vishay.com 3 ...
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... IRFU110, SiHFU110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 IRFU110, SiHFU110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRFU110, SiHFU110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFU110, SiHFU110 Vishay Siliconix + + www.vishay.com 7 ...
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