SI7120DN-T1-E3 Vishay, SI7120DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7120DN-T1-E3
• Description: MOSFET N-CH 60V 6.3A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7120DN-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7120DN-T1-E3TR

Si7120DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
1
0.1
-2
125
Limited
* V
Limited by R
I
D(on)
GS
Single Pulse
T
A
150
> minimum V
= 25 °C
V
DS
Square Wave Pulse Duration (s)
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
10
1
-1
*
GS
at which R
BV
DSS
DS(on)
10
50
40
30
20
10
Limited
0
0.01
1
I
is specified
DM
Single Pulse Power, Junction-to-Ambient
Limited
0.1
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
A
t
1
= P
S-80581-Rev. E, 17-Mar-08
t
Document Number: 72771
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600