HUF75631S3ST Fairchild Semiconductor, HUF75631S3ST Datasheet - Page 3

• Manufacturer Part Number: HUF75631S3ST
• Description: MOSFET N-CH 100V 33A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75631S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 20V
• Input Capacitance (ciss) @ Vds: 1220pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
600
100
20
0
10
0.01
0
0.1
-5
2
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
V
GS
T
50
C
= 10V
, CASE TEMPERATURE (
10
-4
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
-3
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
40
30
20
10
0
25
CASE TEMPERATURE
50
10
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
C
I = I
DM
= 25
HUF75631P3, HUF75631S3ST Rev. B
25
x Z
o
10
P
10
C
JC
DM
o
0
1
0
/t
C DERATE PEAK
125
x R
2
175 - T
o
V
150
JC
C)
t
GS
1
+ T
t
2
C
= 10V
150
C
175
10
10
1
1