SIS402DN-T1-GE3 Vishay, SIS402DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIS402DN-T1-GE3
• Description: MOSFET N-CH 30V 35A 1212-8
• Manufacturer: Vishay

Specifications of SIS402DN-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIS402DN-T1-GE3TR

SiS402DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
Limited by R
75
= 250 µA
0.8
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
I
Limited
1.0
D(on)
DS(on)
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
T
A
GS
= 25 °C
*
> minimum V
150
1.2
V
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
I
DM
BVDSS
Limited
Limited
0.015
0.012
0.009
0.006
0.003
0.000
10
DS(on)
50
40
30
20
10
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
1 s
10 s
100 ms
DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S09-1086-Rev. C, 15-Jun-09
Document Number: 68684
6
10
I
D
T
T
= 19 A
J
J
= 125 °C
= 25 °C
8
100
600
10