FQPF50N06 Fairchild Semiconductor, FQPF50N06 Datasheet - Page 3

• Manufacturer Part Number: FQPF50N06
• Description: MOSFET N-CH 60V 31A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 15.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1540pF @ 25V
• Power - Max: 47W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 31 A
• Power Dissipation: 47000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
10
10
0.05
0.04
0.03
0.02
0.01
0.00
0
10
2
1
0
10
-1
-1
Top :
Bottom : 4.5 V
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
Drain Current and Gate Voltage
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
50
V
V
DS
C
C
C
DS
oss
rss
iss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
V
V
GS
GS
10
= 20V
= 10V
※ Notes :
0
1. 250μ s Pulse Test
2. T
100
C
= 25℃
C
C
C
iss
oss
rss
= C
= C
= C
150
10
※ Note : T
gs
gd
ds
1
+ C
+ C
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
ds
J
10
GS
= 25℃
= shorted)
= 0 V
1
200
10
10
10
10
10
10
2
1
0
2
1
0
12
10
0.2
2
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175 ℃
Figure 2. Transfer Characteristics
25 ℃
0.4
175 ℃
5
Variation vs. Source Current
4
0.6
Q
V
V
10
and Temperature
GS
SD
G
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
-55 ℃
25 ℃
0.8
15
V
V
DS
DS
= 48V
6
= 30V
1.0
20
25
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 30V
= 0V
D
30
1.4
= 50A
Rev. A1. May 2001
35
1.6
10