FDD3860 Fairchild Semiconductor, FDD3860 Datasheet
FDD3860
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FDD3860 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD3860 FDD3860 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 ® MOSFET General Description = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild D Semiconductor‘s advanced Power Trench DS(on) tailored for low r ruggedness for a wide range of switching applications ...
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... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 9A 100V ©2008 Fairchild Semiconductor Corporation FDD3860 Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° 80V, V ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 10V 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDD3860 Rev. 25°C unless otherwise noted J 3.0 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 2 2.0 1 100 100 125 150 ...
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... Switching Capability 100 10 1 SINGLE PULSE THIS AREA MAX RATED J LIMITED BY r ds(on) R θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDD3860 Rev. 25°C unless otherwise noted 25V 75V 100 100us 1ms 10ms o = 1.8 ...
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... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - ©2008 Fairchild Semiconductor Corporation FDD3860 Rev. 25°C unless otherwise noted J SINGLE PULSE 1.8 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve SINGLE PULSE C/W θ ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...