FQD10N20CTM Fairchild Semiconductor, FQD10N20CTM Datasheet - Page 8

• Manufacturer Part Number: FQD10N20CTM
• Description: MOSFET N-CH 200V 7.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD10N20CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.8 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Package Dimensions
0.25 M A M C
3 PLCS
C
(0.60)
0.88
0.64
1
2
6.80
6.35
5.54
5.14
3
2.29
1.14
0.76
A
1.27
0.50
1.52
0.70
2.28
1.60
I - PAK
6.30
5.90
9.65
8.90
Part Weight per unit (gram): 0.44
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
1:1
2.50
2.10
0.60
0.40
1.14
0.90
0.60
0.40
Dimensions in Millimeters
Rev. A2, January 2009