SI3457DV Fairchild Semiconductor, SI3457DV Datasheet - Page 2
![MOSFET P-CH 30V 4A SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
SI3457DV
Manufacturer Part Number
SI3457DV
Description
MOSFET P-CH 30V 4A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.SI3457DV.pdf
(5 pages)
Specifications of SI3457DV
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.1nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3457DV
Manufacturer:
RICOH
Quantity:
40 000
Part Number:
SI3457DV
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3457DV-T1
Manufacturer:
SILICONIX
Quantity:
112
Part Number:
SI3457DV-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3457DV-T1-E3
Manufacturer:
DIOTEC
Quantity:
3 001
Company:
Part Number:
SI3457DV-T1-E3
Manufacturer:
VISHAY
Quantity:
5 700
Company:
Part Number:
SI3457DV-T1-E3
Manufacturer:
VISHAY
Quantity:
69 000
Part Number:
SI3457DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3457DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
78°C/W when
mounted on a 1in
of 2 oz copper
CA
is determined by the user's board design.
T
2
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
pad
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A,Referenced to 25 C
= –250 A,Referenced to 25 C
= –24 V,
= V
= –5 V,
= –15 V,
= –15 V,
= 0 V, I
= 25 V,
= –25 V
= –10 V,
= –4.5 V,
= –10 V, I
= –10 V,
= –15 V,
= –10 V,
= –.5 V
= 0 V,
Test Conditions
GS
, I
D
D
I
= –250 A
= –250 A
S
D
= –1.3 A
V
V
V
= –4 A;T
I
I
V
I
GS
DS
DS
D
D
V
I
I
R
D
D
D
GS
DS
= –4 A
= –3.4 A
GEN
= –4 A,
= 0 V
= 0 V
= –4 A
= –1 A,
= 0 V
= –5 V
= 0 V,
= 6
J
=125
(Note 2)
Min
–30
–20
–1
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
–0.77
Typ Max Units
–1.8
–22
470
126
8.4
2.1
44
67
60
61
12
16
4
7
6
6
2
–100
–1.3
–1.2
100
8.1
–1
–3
50
75
70
14
22
29
12
Si3457DV Rev A1 (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A