FQT7N10TF Fairchild Semiconductor, FQT7N10TF Datasheet

MOSFET N-CH 100V 1.7A SOT-223

FQT7N10TF

Manufacturer Part Number
FQT7N10TF
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQT7N10TF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 850mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
1.85 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
1.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQT7N10TF
FQT7N10TFTR

Available stocks

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Part Number
Manufacturer
Quantity
Price
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FQT7N10TF
Manufacturer:
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Quantity:
154 189
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©2001 Fairchild Semiconductor Corporation
FQT7N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.7A, 100V, R
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• Improved dv/dt capability
DS(on)
Typ
--
G
!
!
-55 to +150
FQT7N10
= 0.35
0.016
1.36
300
100
1.7
6.8
1.7
0.2
6.0
2.0
50
! "
! "
25
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
62.5
QFET
GS
= 10 V
May 2001
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
Rev. A, May 2001
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQT7N10TF

FQT7N10TF Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Features • 1.7A, 100V, R • Low gate charge ( typical 5.8 nC) • Low Crss ( typical 10 pF) • Fast switching • Improved dv/dt capability ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 26mH 1.7A 25V ≤ 7.3A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 500 400 300 C iss C oss 200 C 100 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 150℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics V = 10V 150℃ ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 2.0 1.6 100 1.2 100 ms 0.8 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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