FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet - Page 4
![MOSFET P-CH 20V 5.8A SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC608PZ
Manufacturer Part Number
FDC608PZ
Description
MOSFET P-CH 20V 5.8A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC608PZ.pdf
(5 pages)
Specifications of FDC608PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1330pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.8 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5.8A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC608PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC608PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
116 226
Company:
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD
Quantity:
3 477
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
8
6
4
2
0
1
0.001
Figure 7. Gate Charge Characteristics.
0.1
0
0.01
0.1
0.00001
SINGLE PULSE
R
1
R
I
θ JA
D
V
DS(ON)
T
= -5.8A
GS
A
= 156
= 25
= -4.5V
D = 0.5
LIMIT
0.2
o
o
C
C/W
0.1
0.05
0.02
10
-V
0.01
DS
SINGLE PULSE
0.0001
, DRAIN-SOURCE VOLTAGE (V)
DC
Q
1
g
, GATE CHARGE (nC)
1s
100ms
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
20
= -5V
10ms
Figure 11. Transient Thermal Response Curve.
0.001
1ms
-10V
10
30
100 µ s
0.01
-15V
40
100
t
1
, TIME (sec)
0.1
2500
2000
1500
1000
10
500
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
rss
2
-V
0.1
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
10
t
4
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
1
J
R
θJA
- T
θJA
(t) = r(t) * R
A
t
= 156
100
1
= P * R
6
t
2
C
iss
o
C/W
θJA
θJA
1
SINGLE PULSE
10
R
(t)
/ t
θ JA
2
T
FDC608PZ Rev B (W)
A
8
= 156°C/W
= 25°C
f = 1 MHz
V
1000
GS
= 0 V
100
10