FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet - Page 2

• Manufacturer Part Number: FDC608PZ
• Description: MOSFET P-CH 20V 5.8A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC608PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC608PZTR

Notes:
1. R
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
θJA
∆T
∆T
DS(on)
iss
oss
rss
G
g
gs
gd
rr
GS(th)
DSS
pins. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
DSS
J
J
θJC
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
2
pad of 2oz copper on FR-4 board.
(Note 2)
θCA
(Note 2)
is determined by the user's board design.
T
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
I
A
D
D
F
F
= 25°C unless otherwise noted
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –5.8 A,
= –5.8 A,
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
= 0 V, I
= –16 V,
= ±12 V,
= V
= –4.5V,
= –2.5V,
= –4.5V,I
= –4.5 V,
= –10 V,
= –10 V,
= 15 mV, f = 1.0 MHz
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V,
Test Conditions
GS
, I
D
D
= –250 µA
I
= –250 µA
D
S
d
d
= –5.8A,T
iF
iF
= –1.3 A
V
V
/d
/d
I
I
V
I
GS
D
D
V
I
I
R
D
DS
t
t
D
D
GS
= 100A/µs
DS
= –5.8 A
= –5.0 A
GEN
= –5.8 A,
= 100A/µs
= 0 V
= –5.8 A
= –1 A,
= 0 V
= 0 V,
= –5 V
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–20
–20
Typ Max Units
1330
–1.0
–0.7
–10
270
230
26
38
35
22
12
13
91
60
17
40
15
3
8
3
6
–1.5
–1.3
–1.2
±10
145
–1
30
43
24
16
96
23
60
23
FDC608PZ Rev B (W)
mV/°C
mV/°C
mΩ
nC
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
A
V