FDB3652 Fairchild Semiconductor, FDB3652 Datasheet

MOSFET N-CH 100V 61A TO-263AB

FDB3652

Manufacturer Part Number
FDB3652
Description
MOSFET N-CH 100V 61A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB3652

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 61A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB3652

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB3652
Manufacturer:
FSC
Quantity:
2 400
Part Number:
FDB3652
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652
N-Channel PowerTrench
100V, 61A, 16m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82769
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
GATE
V
V
I
E
P
T
R
R
R
D
GS
J
Symbol
DSS
AS
D
SOURCE
, T
JC
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 41nC (Typ.), V
STG
RR
= 14m (Typ.), V
TO-263AB
FDB SERIES
Body Diode
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
GS
(FLANGE)
GS
amb
(FLANGE)
C
C
DRAIN
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
DRAIN
= 25
= 100
= 10V
o
= 10V, I
C
= 25
o
C, V
o
o
C, V
C, V
D
GS
®
= 61A
GS
GS
MOSFET
= 10V)
= 10V)
= 10V) with R
T
Parameter
C
= 25°C unless otherwise noted
TO-220AB
FDP SERIES
certification.
JA
= 43
GATE
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
DRAIN
SOURCE
o
2
C/W)
copper pad area
(FLANGE)
DRAIN
TO-262AA
FDI SERIES
-55 to 175
Ratings
Figure 4
SOURCE
100
±20
182
150
FDB3652 / FDP3652 / FDI3652 Rev. B1
1.0
1.0
61
43
62
43
DRAIN
9
GATE
October 2003
G
D
S
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

Related parts for FDB3652

FDB3652 Summary of contents

Page 1

... C Parameter = 10V 10V 10V) with C/ copper pad area certification. October 2003 SOURCE DRAIN D GATE G TO-262AA S FDI SERIES Ratings Units 100 V ± Figure 4 A 182 mJ 150 -55 to 175 C o 1 C/W FDB3652 / FDP3652 / FDI3652 Rev. B1 ...

Page 2

... SD SD Tape Width Quantity 24mm 800 units N/A 50 units N/A 50 units Min Typ Max 100 - - - - 150 250 ±100 0.014 0.016 - 0.018 0.026 - 0.035 0.043 - 2880 - - 390 - - 100 - 6.5 = 50V DD = 61A - 1.0mA - 146 - 107 - - 1. 1 FDB3652 / FDP3652 / FDI3652 Rev. B1 Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB3652 / FDP3652 / FDI3652 Rev. B1 175 ...

Page 4

... Resistance vs Junction Temperature )/(1.3*RATED DSS DD *R)/(1.3*RATED +1] AS DSS DD o STARTING 150 TIME IN AVALANCHE (ms) AV Capability V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V 61A 120 160 JUNCTION TEMPERATURE ( C) J FDB3652 / FDP3652 / FDI3652 Rev 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 100 0 Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 50V WAVEFORMS IN DESCENDING ORDER 61A 30A GATE CHARGE (nC) g Gate Currents FDB3652 / FDP3652 / FDI3652 Rev. B1 200 50 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB3652 / FDP3652 / FDI3652 Rev 10V 90% ...

Page 7

... application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Iches Squared (EQ. 3) Area in Centimeter Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB3652 / FDP3652 / FDI3652 Rev ...

Page 8

... RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB3652 / FDP3652 / FDI3652 Rev ...

Page 9

... ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB3652 / FDP3652 / FDI3652 Rev ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB3652 / FDP3652 / FDI3652 Rev. B1 ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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