STB60NF10T4 STMicroelectronics, STB60NF10T4 Datasheet - Page 3

• Manufacturer Part Number: STB60NF10T4
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB60NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 4270pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7951-2; STB60NF10T4

STB60NF10 - STB60NF10 -1 - STP60NF10
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
4.
Table 2.
Symbol
Symbol
dv/dt
E
I
P
R
R
DM
I
V
V
AS
T
D
I
TOT
SD
Starting T
thJC
thJA
T
DS
GS
stg
D
(1)
(2)
l
(4)
(3)
≤ 80A, di/dt ≤ 300A/µs, V
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
J
Absolute maximum ratings
Thermal data
= 25
o
C, I
D
= 40A, V
Parameter
Parameter
DD
≤ V
C
DD
(BR)DSS
= 25°C
GS
= 30V
= 0)
, T
C
C
J
=100°C
≤ T
= 25°C
JMAX
-55 to 175
Value
Value
± 20
100
320
300
485
62.5
80
66
16
300
0.5
2
Electrical ratings
W/°C
V/ns
°C/W
°C/W
Unit
Unit
°C
W
°C
V
V
A
A
A
J
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