FDS6575 Fairchild Semiconductor, FDS6575 Datasheet - Page 4

• Manufacturer Part Number: FDS6575
• Description: MOSFET P-CH 20V 10A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6575

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4951pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Forward Transconductance Gfs (max / Min): 57 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6575; FDS6575TR

Typical Characteristics
0.01
5
4
3
2
1
0
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
0.01
Figure 7. Gate Charge Characteristics.
I
D
0.001
= -10A
R
0.01
DS(ON)
0.1
SINGLE PULSE
R
0.0001
1
V
JA
T
GS
A
10
= 125
LIMIT
= 25
= -4.5V
D = 0.5
o
o
C
0.2
C/W
0.05
-V
0.1
0.1
0.02
DS
, DRAIN-SOURCE VOLTAGE (V)
0.01
20
Q
SINGLE PULSE
g
, GATE CHARGE (nC)
0.001
30
DC
1
10s
Figure 11. Transient Thermal Response Curve.
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
10ms
DS
40
= -5V
1ms
10
0.01
-15V
100
50
-10V
100
60
0.1
t
1
, TIME (sec)
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
RSS
1
0.01
C
OSS
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
t
1
10
ISS
, TIME (sec)
10
1
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
100
SINGLE PULSE
R
JA
15
(t) = r(t) + R
JA
A
T
t
10
= 125
1
A
= P * R
= 125°C/W
t
= 25°C
2
f = 1 MHz
V
FDS6575 Rev F(W)
GS
o
= 0 V
C/W
JA
1
JA
(t)
/ t
100
20
2
1000