FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet - Page 3
![MOSFET P-CH 30V 13A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6679AZ
Manufacturer Part Number
FDS6679AZ
Description
MOSFET P-CH 30V 13A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6679AZ.pdf
(6 pages)
Specifications of FDS6679AZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.3 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
3845pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0093 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6679AZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6679AZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6679AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics
Figure 3.
70
60
50
40
30
20
10
70
60
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
0
Figure 1. On Region Characteristics
2.0
-80
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
Normalized On Resistance vs Junction
V
I
D
GS
= -13A
= -10V
-40
-V
T
2.5
J
-V
DS
, JUNCTION TEMPERATURE
GS
1
, DRAIN TO SOURCE VOLTAGE (V)
V
Temperature
, GATE TO SOURCE VOLTAGE (V)
GS
V
T
GS
0
J
= - 4V
= 150
3.0
= - 4.5V
V
GS
o
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
C
= - 5V
40
µ
2
s
V
GS
3.5
T
T
T
= - 10V
V
J
J
J
GS
80
= -55
= 25
= 25°C unless otherwise noted
= - 3.5V
o
o
C
3
C
4.0
(
120
o
C
V
GS
)
= - 3V
µ
s
4.5
160
4
3
Figure 2. Normalized
Figure 4.
Figure 6.
1E-3
0.01
100
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
20
10
1
0
0.0
3.0
0
V
GS
Voltage vs Source Current
-V
Current and Gate Voltage
= 0V
On-Resistance vs Gate to Source
0.2
-V
T
SD
10
Source to Drain Diode Forward
J
GS
, BODY DIODE FORWARD VOLTAGE (V)
= 150
4.5
, GATE TO SOURCE VOLTAGE (V)
V
I
GS
-I
0.4
o
D
20
C
D
= -13A
, DRAIN CURRENT(A)
= - 3.5V
Voltage
V
GS
On-Resistance vs Drain
0.6
6.0
30
= - 4V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
0.8
J
40
= 25
T
T
V
T
V
J
7.5
J
J
GS
GS
= -55
o
= 150
= 25
C
www.fairchildsemi.com
1.0
= - 5V
= - 10V
50
V
GS
o
o
o
C
C
C
= - 4.5V
1.2
9.0
60
µ
µ
s
s
1.4
70
10