FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet - Page 3

• Manufacturer Part Number: FDS6679AZ
• Description: MOSFET P-CH 30V 13A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6679AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 3845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6679AZTR

©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics
Figure 3.
70
60
50
40
30
20
10
70
60
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
0
Figure 1. On Region Characteristics
2.0
-80
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
Normalized On Resistance vs Junction
V
I
D
GS
= -13A
= -10V
-40
-V
T
2.5
J
-V
DS
, JUNCTION TEMPERATURE
GS
1
, DRAIN TO SOURCE VOLTAGE (V)
V
Temperature
, GATE TO SOURCE VOLTAGE (V)
GS
V
T
GS
0
J
= - 4V
= 150
3.0
= - 4.5V
V
GS
o
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
C
= - 5V
40
µ
2
s
V
GS
3.5
T
T
T
= - 10V
V
J
J
J
GS
80
= -55
= 25
= 25°C unless otherwise noted
= - 3.5V
o
o
C
3
C
4.0
(
120
o
C
V
GS
)
= - 3V
µ
s
4.5
160
4
3
Figure 2. Normalized
Figure 4.
Figure 6.
1E-3
0.01
100
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
20
10
1
0
0.0
3.0
0
V
GS
Voltage vs Source Current
-V
Current and Gate Voltage
= 0V
On-Resistance vs Gate to Source
0.2
-V
T
SD
10
Source to Drain Diode Forward
J
GS
, BODY DIODE FORWARD VOLTAGE (V)
= 150
4.5
, GATE TO SOURCE VOLTAGE (V)
V
I
GS
-I
0.4
o
D
20
C
D
= -13A
, DRAIN CURRENT(A)
= - 3.5V
Voltage
V
GS
On-Resistance vs Drain
0.6
6.0
30
= - 4V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
0.8
J
40
= 25
T
T
V
T
V
J
7.5
J
J
GS
GS
= -55
o
= 150
= 25
C
www.fairchildsemi.com
1.0
= - 5V
= - 10V
50
V
GS
o
o
o
C
C
C
= - 4.5V
1.2
9.0
60
µ
µ
s
s
1.4
70
10