IXFH80N10Q IXYS, IXFH80N10Q Datasheet
IXFH80N10Q
Manufacturer Part Number
IXFH80N10Q
Description
MOSFET N-CH 100V 80A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH80N10Q.pdf
(2 pages)
Specifications of IXFH80N10Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
45 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.015
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IXFH80N10
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH80N10Q
Manufacturer:
IXYS
Quantity:
188
Part Number:
IXFH80N10Q
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
Symbol
(T
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
JM
L
DGR
AR
AS
D
J
stg
DSS
GS(th)
DS(on)
DSS
GS
GSM
d
J
= 25 C, unless otherwise specified)
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
, di/dt 100 A/ s, V
DSS
, I
D
D
DC
D
= 4 mA
=
, V
= 0.5 I
G
= 2
DS
= 0
A
D25
(TO-247)
TO-247 AD
TO-268
GS
= 1 M
DD
T
T
J
J
V
= 25 C
= 125 C
DSS
JM
,
2 %
Min. Typ.
100
2.0
IXFH 80N10Q
IXFT 80N10Q
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
100
100
320
360
150
300
1.5
20
30
80
80
30
5
6
4
100
Max.
25
15
4
1
V/ns
m
mA
mJ
nA
W
C
C
C
C
V
V
A
V
V
V
V
A
A
A
J
g
g
TO-268 (IXFT) Case Style
G = Gate
S = Source
Features
• IXYS advanced low gate charge
• International standard packages
• Low gate charge and capacitance
• Low R
• Unclamped Inductive Switching (UIS)
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
TO-247 AD (IXFH)
process
- easier to drive
- faster switching
rated
flammability classification
V
R
I
t
D25
DSS
DS(on)
rr
DS (on)
£ 200ns
G
S
D = Drain
TAB = Drain
= 100
= 80
= 15 mW
98592B (7/00)
(TAB)
(TAB)
V
A
1 - 2
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IXFH80N10Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 80N10Q IXFT 80N10Q Maximum Ratings 100 = 1 M 100 320 1 DSS 360 -55 ... +150 150 -55 ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 80N10Q IXFT 80N10Q TO-247 AD (IXFH) Outline ...