IXTA200N075T7 IXYS, IXTA200N075T7 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA200N075T7
Manufacturer Part Number
IXTA200N075T7
Description
MOSFET N-CH 75V 200A TO-263-7
Specifications of IXTA200N075T7
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
DM
D25
LRMS
AR
GSS
DSS
L
SOLD
DGR
AS
D
J
JM
stg
GS(th)
DSS
GSM
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
J
J
J
GS
GS
DS
DS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
G
= 25 A, Note 1
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
IXTA200N075T7
DD
T
J
≤ V
= 150° C
DSS
JM
Min.
2.0
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
4.0
± 20
200
120
540
500
430
300
260
175
75
75
25
3
± 200
3
250
Max.
4.0
5.0
5
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
A
V
V
V
A
A
A
g
V
TO-263 (7-lead) (IXTA..7)
Features
Advantages
Applications
Pin-out:1 - Gate
V
I
R
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
D25
DC/DC Converters and Off-line UPS
High Current Switching
Systems
DSS
Applications
DS(on)
1
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
7
=
= 200
≤ ≤ ≤ ≤ ≤
5.0 m Ω Ω Ω Ω Ω
75
DS99691 (11/06)
(TAB)
A
V
Related parts for IXTA200N075T7
IXTA200N075T7 Summary of contents
... ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA200N075T7 Maximum Ratings MΩ ± 20 200 120 540 JM 25 500 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 3 Characteristic Values Min. Typ. 75 2.0 ± 200 T = 150° ...
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...
... V - Volts DS Fig Normalized to I DS(on) vs. Drain Current 2.6 2.4 2 10V GS 1.8 15V - - - - 1.6 1.4 1 100 150 I - Amperes D © 2006 IXYS CORPORATION All rights reserved = 10V 0.6 0.7 0.8 0 10V 1.2 1.4 1.6 1 100A Value 175º 25ºC J ...
... V - Volts SD Fig. 11. Capacitance 10,000 1,000 MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 150ºC 5 25º 1.1 1.2 1.3 1.4 1.00 C iss 0.10 C oss C rss 0.01 ...
... I = 50A 25A Ohms G Fig. 17. Resistive Turn-off Switching Times vs. Drain Current d(off Ω 10V 38V Amperes D © 2006 IXYS CORPORATION All rights reserved Ω 10V 38V 105 115 125 170 90 150 125º 130 75 70 110 25º 200N075T7 IXTA Fig. 14. Resistive Turn-on Rise Time vs ...
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