IRL8113LPBF International Rectifier, IRL8113LPBF Datasheet - Page 8
![MOSFET N-CH 30V 105A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRL8113LPBF
Manufacturer Part Number
IRL8113LPBF
Description
MOSFET N-CH 30V 105A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL8113LPBF.pdf
(13 pages)
Specifications of IRL8113LPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2840pF @ 15V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
105A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
105 A
Power Dissipation
110 W
Mounting Style
Through Hole
Gate Charge Qg
23 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL8113LPBF
Control FET
P
P
Power MOSFET Selection for Non-Isolated DC/DC Converters
loss
8
loss
This can be expanded and approximated by;
= I
+ I ×
+ Q
+
= P
(
⎛
⎜
⎝
(
⎛
⎝
Q
rms
conduction
g
2
oss
× V
2
Q
× R
i
× V
g
gd
g
× f
ds(on )
in
× V
+ P
× f
)
in
)
switching
× f
⎞
⎠
⎞
⎟ + I ×
⎠
+ P
⎛
⎜
⎝
drive
Q
+ P
i
gs 2
g
× V
output
in
× f
⎞
⎟
⎠
Synchronous FET
by;
*dissipated primarily in Q1.
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Q
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
of the converter and therefore sees transitions be-
tween ground and V
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
potential for Cdv/dt turn on.
Figure A: Q
P
P
loss
loss
The power loss equation for Q2 is approximated
For the synchronous MOSFET Q2, R
The drain of Q2 is connected to the switching node
= P
= I
+ Q
+
(
(
⎛
⎜
⎝
conduction
rms
Q
oss
g
2
oss
2
Characteristic
× V
gd
× R
/Q
× V
g
gs1
+ P
ds(on)
× f
in
in
must be minimized to reduce the
. As Q1 turns on and off there is
drive
× f
)
)
rr
⎞
⎠
+ P
both generate losses that
+ Q
output
(
*
rr
× V
www.irf.com
in
ds(on)
× f
oss
is an im-
and re-
)