IRL8113LPBF International Rectifier, IRL8113LPBF Datasheet - Page 4
![MOSFET N-CH 30V 105A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRL8113LPBF
Manufacturer Part Number
IRL8113LPBF
Description
MOSFET N-CH 30V 105A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL8113LPBF.pdf
(13 pages)
Specifications of IRL8113LPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2840pF @ 15V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
105A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
105 A
Power Dissipation
110 W
Mounting Style
Through Hole
Gate Charge Qg
23 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL8113LPBF
4
100000
1000.0
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-to-Drain Voltage (V)
0.5
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
1.0
Ciss
Crss
Coss
1.5
f = 1 MHZ
10
2.0
V GS = 0V
2.5
3.0
100
10000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
0.1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 17A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1.0
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
VDS= 15V
30
10.0
40
www.irf.com
100µsec
50
10msec
1msec
100.0
60