STB11NK50ZT4 STMicroelectronics, STB11NK50ZT4 Datasheet - Page 13
STB11NK50ZT4
Manufacturer Part Number
STB11NK50ZT4
Description
MOSFET N-CH 500V 10A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB11NK50ZT4.pdf
(16 pages)
Specifications of STB11NK50ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1390pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.52 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
77 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
480mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2451-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB11NK50ZT4
Manufacturer:
ST
Quantity:
995
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
Package mechanical data
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°
13/16