SPW11N60C3 Infineon Technologies, SPW11N60C3 Datasheet - Page 3

• Manufacturer Part Number: SPW11N60C3
• Description: MOSFET N-CH 650V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N60C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013728; SPW11N60C3; SPW11N60C3IN; SPW11N60C3X; SPW11N60C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
4 I
Rev. 2.6
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate to source charge
Gate to drain charge
Identical low-side and high-side switch.
SD
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D
, di/dt<=400A/us, V
DClink
=400V, V
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r
d(off)
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fs
iss
oss
rss
gs
gd
peak
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BR, DSS
V
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DS
GS
GS
DS
DD
DD
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GS
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oss
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