BSC079N03SG Infineon Technologies, BSC079N03SG Datasheet - Page 4

• Manufacturer Part Number: BSC079N03SG
• Description: MOSFET N-CH 30V 40A TDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC079N03SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2230pF @ 15V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC079N03SGINTR; BSC079N03SGXT; BSC079N03SGXTINTR; BSC079N03SGXTINTR; SP000016414

Rev. 1.91
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
10
=f(T
10
10
10
10
-1
3
2
1
0
70
60
50
40
30
20
10
10
DS
0
1000
100
10
0.1
1
0.1
C
-1
0
); T
)
C
p
limited by on-state
resistance
=25 °C; D =0
40
10
1
DC
0
V
T
DS
C
80
[°C]
[V]
10
100 µs
10
1
10 µs
10 ms
120
1 ms
1 µs
160
page 4
10
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
10
10
10
10
=f(t
-1
-2
1
0
50
40
30
20
10
10
C
0
0.01
10
0.1
1
); V
0
-6
p
0
0.05
0.02
0.2
0.5
0.01
)
0.1
GS
single pulse
≥10 V
10
p
0
/T
-5
40
10
0
-4
T
t
p
C
80
[s]
[°C]
10
0
-3
BSC079N03S G
120
10
0
-2
2009-10-27
160
10
0
-1