BSC079N03SG Infineon Technologies, BSC079N03SG Datasheet - Page 2

• Manufacturer Part Number: BSC079N03SG
• Description: MOSFET N-CH 30V 40A TDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC079N03SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2230pF @ 15V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC079N03SGINTR; BSC079N03SGXT; BSC079N03SGXTINTR; BSC079N03SGXTINTR; SP000016414

Rev. 1.91
1)
2)
connection. PCB is vertical in still air.
2)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
See figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
bottom
top
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=40 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=30 µA
D
GS
GS
DS
DS(on)max
=40 A
=40 A
=0 V,
=0 V,
=0 V
2)
,
min.
1.2
30
31
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
9.3
6.6
10
10
62
1
-
-
-
-
BSC079N03S G
max.
11.6
100
100
2.1
7.9
20
62
45
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2009-10-27