ATP206-TL-H SANYO, ATP206-TL-H Datasheet
ATP206-TL-H
Specifications of ATP206-TL-H
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ATP206-TL-H Summary of contents
Page 1
... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP206 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... Switching Time Test Circuit =20V 10V =20A =1Ω D PW=10μs D.C.≤1% G ATP206 P.G 50Ω S ATP206 Symbol Conditions V GS (off =10V =1mA | yfs | V DS =10V =20A R DS (on =20A =10V R DS (on =10A =4.5V Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss ...
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... R DS (on =10A 20 20A Gate-to-Source Voltage 1 0.1 1.0 10 Drain Current Time -- 100 (on 0.1 1.0 10 Drain Current ATP206 60 Tc=25 ° =10V =3. 1.5 2.0 0 0.5 IT14333 40 Single pulse Tc=25 ° --60 --40 IT14335 100 =10V Single pulse 0.001 IT14337 =20V V GS =10V 3 2 1000 ...
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... Case Temperature ° C Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...