AOT430 Alpha & Omega Semiconductor Inc, AOT430 Datasheet
AOT430
Specifications of AOT430
785-1145-1
785-1145-5
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AOT430 Summary of contents
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... General Description The AOT430 uses advanced trench technology and design to provide excellent R DS(ON) charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications). TO-220 G D Absolute Maximum Ratings T =25° ...
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... AOT430 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Transconductance FS V Diode Forward Voltage ...
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... AOT430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 10V 8V 200 150 100 (Volts) DS Figure 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 I =30A (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 100 5. =4. 3.5 Figure 2: Transfer Characteristics 2 1 ...
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... AOT430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =30V DS I =30A (nC) g Figure 7: Gate-Charge Characteristics 1000 T =175°C, T =25°C J(Max) C 100 limited DS(ON) 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJC J, =0.45°C/W θJC 1 0.1 Single Pulse ...
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... AOT430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 T (°C) CASE Figure 12: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 300 250 200 150 100 125 150 175 Figure 13: Power De-rating (Note 100 125 150 175 T (°C) CASE ...