DMG1012T-7 Diodes Inc, DMG1012T-7 Datasheet - Page 5

• Manufacturer Part Number: DMG1012T-7
• Description: IC MOSFET N-CHAN SOT-523
• Manufacturer: Diodes Inc

Specifications of DMG1012T-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 630mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60.67pF @ 16V
• Power - Max: 280mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.63 A
• Power Dissipation: 0.28 W
• Maximum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG1012T-7; DMG1012T-7DITR; Q4768583

Package Outline Dimensions
Suggested Pad Layout
DMG1012T
Document number: DS31783 Rev. 3 - 2
K
J
Z
Y
G
A
H
D
X
B C
N
L
E
M
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Dimensions Value (in mm)
Dim
A
B
C
D
G
H
K
M
N
J
L
α
All Dimensions in mm
Z
X
Y
C
E
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Min
⎯
0°
SOT-523
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
⎯
8°
0.51
1.8
0.4
1.3
0.7
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Typ
⎯
DMG1012T
© Diodes Incorporated
October 2009