DMG1012T-7 Diodes Inc, DMG1012T-7 Datasheet - Page 2

• Manufacturer Part Number: DMG1012T-7
• Description: IC MOSFET N-CHAN SOT-523
• Manufacturer: Diodes Inc

Specifications of DMG1012T-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 630mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60.67pF @ 16V
• Power - Max: 280mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.63 A
• Power Dissipation: 0.28 W
• Maximum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG1012T-7; DMG1012T-7DITR; Q4768583

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG1012T
Document number: DS31783 Rev. 3 - 2
4. Short duration pulse test used to minimize self-heating effect.
1.5
1.2
0.9
0.6
0.3
0
0
V
GS
V
V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
GS
Fig. 1 Typical Output Characteristics
= 2.0V
1
DS
V
= 2.5V
V
V
GS
GS
GS
= 3.0V
= 4.5V
= 8.0V
2
J
= 25°C
@T
3
A
= 25°C unless otherwise specified
V
V
4
GS
GS
= 1.2V
= 1.5V
Symbol
R
BV
V
5
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DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
Q
t
t
SD
oss
DSS
iss
rss
gs
gd
fs
r
f
g
|
2 of 6
Min
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.2
0.9
0.6
0.3
60.67
736.6
116.6
9.68
5.37
93.6
26.7
12.3
Typ
0.3
0.4
0.5
1.4
0.7
5.1
7.4
0
-
-
-
-
0
V
DS
Max
±1.0
0.5
100
Fig. 2 Typical Transfer Characteristics
1.0
0.4
0.5
0.7
1.2
= 5V
V
-
-
-
-
-
-
-
-
-
-
-
-
T = 85°C
GS
A
T = 125°C
, GATE SOURCE VOLTAGE (V)
A
T = 150°C
A
1
Unit
nA
μA
pC
pC
pC
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
T = -55°C
1.5
A
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
V
R
I
D
D
T = 25°C
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
GS
DD
L
A
=250mA
= 200mA
= 47Ω, R
= 20V, V
= V
= 10V, I
=16V, V
= 0V, I
= ±4.5V, V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 0V, I
=4.5V, V
= 10V, V
GS
2
Test Condition
, I
D
S
G
D
D
GS
= 250μA
D
D
D
= 150mA
GS
DMG1012T
DS
GS
= 250μA
= 400mA
= 10Ω,
= 600mA
= 500mA
= 350mA
DS
2.5
= 0V,
= 0V
= 10V,
= 4.5V,
© Diodes Incorporated
= 0V
October 2009
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