AO4468 Alpha & Omega Semiconductor Inc, AO4468 Datasheet

MOSFET N-CH 30V 11.6A 8-SOIC

AO4468

Manufacturer Part Number
AO4468
Description
MOSFET N-CH 30V 11.6A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4468

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1038-2

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Rev 6: December 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
and battery protection applications.
D
DS(ON)
D
B
Parameter
C
D
C
Top View
T
T
T
T
. This device is ideal for load switch
A
A
A
A
D
=25° C
=70° C
=25° C
=70° C
C
S
A
A D
S
A
=25° C unless otherwise noted
SOIC-8
S
t ≤ 10s
Steady-State
Steady-State
G
Bottom View
Symbol
V
V
I
I
I
E
P
T
Symbol
www.aosmd.com
D
DM
AS
J
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
JA
JL
AR
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
ESD Protected
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=10V)
Tested
GS
GS
Maximum
-55 to 150
=10V)
= 4.5V)
10.5
±20
3.1
8.5
30
50
19
18
2
30V N-Channel MOSFET
G
Max
40
75
24
D
S
30V
10.5A
< 17m
< 23m
AO4468
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A
Page 1 of 5

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AO4468 Summary of contents

Page 1

... General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SOIC-8 Top View Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter Drain-Source Voltage ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4468 Min Typ Max Units =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =10.5A D 1.0E+01 40 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4468 25° (Volts =4. = =10V GS I =10. 100 125 150 175 200 0 Temperature (° (Note E) 125° C 25° ...

Page 4

... 100 0.00001 Figure 11: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4468 C iss C oss (Volts =25° 0.001 0.1 10 1000 Pulse Width (s) Ambient (Note F) ...

Page 5

... VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4468 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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