AO3420 Alpha & Omega Semiconductor Inc, AO3420 Datasheet - Page 3

• Manufacturer Part Number: AO3420
• Description: MOSFET N-CH 20V 6A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3420

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 630pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1014-2

AO3420
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
0
0
10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
V
GS
Figure 1: On-Regions Characteristi
=1.8V
1
2
25°C
3V
4V
2
Gate Voltage
2
4
V
V
GS
DS
I
D
(Volts)
(Volts)
4
(A)
125°C
I
D
3
6
=3.8A
V
V
V
V
GS
GS
25°C
GS
GS
125°C
=2.5V
=4.5V
=10V
=2V
V
6
GS
I
8
4
D
=1.5V
cs
=6A
10
8
5
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1.6
1.4
1.2
1.0
0.8
20
15
10
5
0
0.0
0.0
0
Figure 4: On-Resistance vs. Junction Temperature
V
GS
25
=5V
Figure 6: Body-Diode Characteristics
125°C
V
I
Figure 2: Transfer Characteristics
D
0.5
0.2
GS
=5A
=4.5V
50
V
DS
125°C
Temperature (°C)
=5V
V
I
D
1.0
0.4
GS
=4A
25°C
I
V
75
V
D
=2.5V
GS
=3.5A
125°C
SD
(Volts)
(Volts)
V
I
100
D
GS
=2A
1.5
0.6
=1.8V
25°C
25°C
125
I
D
=1A
270
1.7
3.6
V
I
13
2.0
D
0.8
GS
=6A
150
=10V
I
D
=3.8A
175
2.5
1.0