AO3414 Alpha & Omega Semiconductor Inc, AO3414 Datasheet - Page 4

• Manufacturer Part Number: AO3414
• Description: MOSFET N-CH 20V 4.2A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3414

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 436pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1009-2

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.00
100.00
10.00
10.00
1.00
1.00
0.10
0.10
0.01
0.01
Rev 7: July 2010
Rev 7: July 2010
5
5
4
4
3
3
2
2
1
1
0
0
0.001
0.01
0.1
0.1
0.1
0
0
10
0.00001
T
T
T
T
R
R
limited
limited
1
V
V
I
I
J(Max)
J(Max)
A
A
D
D
DS(ON)
DS(ON)
Figure 9: Maximum Forward Biased Safe
DS
DS
=25°C
=25°C
=3A
=3A
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
=10V
=10V
0.5
0.5
D=T
T
R
=150°C
=150°C
J,PK
JA
on
=125°C/W
=T
Operating Area (Note E)
/T
A
+P
1
1
0.0001
1
1
DM
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
.Z
V
Q
Q
1.5
1.5
Single Pulse
DS
g
g
JA
(nC)
(nC)
.R
(Volts)
JA
2
2
0.001
DC
DC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
10
2.5
2.5
100 s
100 s
1ms
1ms
10ms
10ms
1s
1s
10 s
10 s
0.1s
0.1s
3
3
0.01
www.aosmd.com
www.aosmd.com
Pulse Width (s)
3.5
3.5
100
100
0.1
1000
1000
400
400
300
300
200
200
100
100
100
100
10
10
0.00001
0
0
1
1
12
0
0
Figure 10: Single Pulse Power Rating Junction-
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
C
C
1
oss
oss
0.001
P
D
5
5
T
on
to-Ambient (Note E)
V
V
10
DS
DS
T
Pulse Width (s)
C
C
C
C
(Volts)
(Volts)
rss
rss
iss
iss
0.1
10
10
100
T
T
T
T
J(Max)
J(Max)
A
A
=25°C
=25°C
10
15
15
AO3414
=150°C
=150°C
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1000
1000
20
20