IRFP460 IXYS, IRFP460 Datasheet
IRFP460
Manufacturer Part Number
IRFP460
Description
MOSFET N-CH 500V 20A TO-247AD
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IRFP460.pdf
(4 pages)
Specifications of IRFP460
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
260 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
65 ns
Rise Time
81 ns
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
570
Pd, (w)
260
Rthjc, Max, (k/w)
0.45
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFP460IX
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MegaMOS
Power MOSFET
N-Channel Enhancement Mode, HDMOS
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
AR
GSS
D25
DSS
GS
GSM
AR
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
S
V
J
J
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
150 C, R
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
I
DM
, di/dt 100 A/ s, V
GS
TM
, I
D
D
DC
D
= 250 A
= 250 A
DSS
G
, V
= 12 A
= 2
DS
= 0
GS
= 1 M
DD
T
T
J
J
(T
= 25 C
= 125 C
V
DSS
J
= 25 C, unless otherwise specified)
JM
,
TM
Family
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
IRFP 460
Maximum Ratings
0.25
typ.
1.15/10 Nm/lb.in.
500
500
260
150
300
3.5
20
30
20
80
20
28
6
max.
0.27
100
250
25
4
V/ns
mJ
nA
W
V
V
V
V
A
A
A
V
V
g
C
C
C
C
A
A
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
D(cont)
Repetitive avalanche energy rated
Fast switching times
Low R
Rugged polysilicon gate cell structure
High Commutating dv/dt Rating
Switching Power Supplies
Motor controls
DSS
DS(on)
DS (on)
HDMOS
= 500 V
= 20 A
= 0.27
D = Drain,
TAB = Drain
TM
process
92825D (5/98)
D (TAB)
1 - 4
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IRFP460 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS DS(on Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 460 TM Family Maximum Ratings 500 = 1 M 500 3.5 DD DSS 260 -55 ... +150 150 -55 ... +150 1 ...
Page 2
... Characteristic Values ( unless otherwise specified) J min. typ. max 1.8 = 100 V 570 860 ns R 5.7 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IRFP 460 TO-247 AD Outline ...
Page 3
... Volts DS Figure 1. Output Characteristics 10V GS 2.4 0 Tj=125 C 2.0 1.6 1.2 0 Amperes D Figure 3. R normalized to value at I DS(on -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved Tj= 12A D 75 100 125 150 IRFP 460 V =10V 125 Volts DS Figure 2 ...
Page 4
... Figure 7. Gate Charge 125 0.2 0.4 0.6 0 Volts SD Figure 9. Source Current vs. Source to Drain Voltage 1 0.1 0. © 2000 IXYS All rights reserved 5000 2500 1000 500 250 100 150 200 0 100 0.1 1.0 1.2 10 Figure10. Forward Bias Safe Operating Area Single pulse - Pulse Width - Seconds Figure 11 ...