STW21NM60ND STMicroelectronics, STW21NM60ND Datasheet - Page 14
STW21NM60ND
Manufacturer Part Number
STW21NM60ND
Description
MOSFET N-CH 600V 17A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STW21NM60ND.pdf
(18 pages)
Specifications of STW21NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 50V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
17 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8453-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
14/18
Dim
A1
b1
e1
L1
L2
c2
A
D
E
b
e
L
c
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
2.72
0.88
1.32
9.35
4.60
1.70
0.70
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max