STW7N95K3 STMicroelectronics, STW7N95K3 Datasheet - Page 7

• Manufacturer Part Number: STW7N95K3
• Description: MOSFET N-CH 950V 7.2A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW7N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1031pF @ 100V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.35 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8798-5

STF7N95K3, STP7N95K3, STW7N95K3
Figure 8.
Figure 10. Normalized B
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
(norm)
BV
1.00
0.90
1.10
0.80
0.70
V
(V)
(A)
DSS
12
10
I
12
10
GS
D
0
2
8
4
2
8
6
4
6
0
0
0
Output characteristics
-50
5
10
V
V
0
10
I
DD
GS
D
=7.2 A
=760 V
20
=10 V
15
VDSS
50
30
V
20
GS
vs temperature
100
=10V
40
25
V
T
Q
DS
J
(°C)
g
(nC)
(V)
AM01581v1
AM01579v1
AM01583v1
5V
6V
7V
700
600
500
400
300
200
100
0
Figure 9.
Figure 11. Static drain-source on resistance
R
DS(on)
1000
(pF)
100
(A)
(Ω)
0.1
I
1.0
1.2
C
D
1.3
10
1.4
1.1
8
7
6
3
2
9
1
0
5
4
0
1
0.1
1.5
Transfer characteristics
2
2
1
2.5
V
V
I
D
DS
GS
4
= 3.6 A
=15V
=10 V
3
Electrical characteristics
10
6
3.5
8
4
100
4.5
10
V
5
V
GS
DS
(V)
AM01580v1
AM01586v1
I
AM01584v1
(V)
D
(A)
Crss
Ciss
Coss
7/15