IRL1404ZSTRLPBF International Rectifier, IRL1404ZSTRLPBF Datasheet - Page 5

MOSFET N-CH 40V 75A D2PAK

IRL1404ZSTRLPBF

Manufacturer Part Number
IRL1404ZSTRLPBF
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRL1404ZSTRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
200A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRL1404ZSTRLPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
IR
Quantity:
5 099
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
IR
Quantity:
10 035
www.irf.com
0.0001
200
150
100
0.001
50
0.01
0.1
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
J
J
1
Ci= i Ri
1
Ci
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
R
-60 -40 -20 0
1
R
1
I D = 75A
V GS = 10V
2
R
2
2
T J , Junction Temperature (°C)
R
0.01
vs. Temperature
2
R
3
3
20 40 60 80 100 120 140 160 180
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.185
0.241
0.227
0.1
i (sec)
5
1

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