IRLZ34NPBF International Rectifier, IRLZ34NPBF Datasheet - Page 6

• Manufacturer Part Number: IRLZ34NPBF
• Description: MOSFET N-CH 55V 30A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Input Capacitance (ciss) @ Vds: 880pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 30 A
• Gate Charge, Total: 25 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.035 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8.9 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 27 A
• Mounting Style: Through Hole
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLZ34NPBF

V
V
I
G
AS
DS
Q
GS
R
G
V
t
DS
p
Q
Charge
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01Ω
V
(BR)DSS
+
V
-
V
DD
DD
250
200
150
100
50
0
12V
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
Current Regulator
= 25V
.2µF
50
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
I
125
D
TOP
BOTTOM
+
-
V
150
DS
11A
6.6A
16A
I
D
175
A