IRF7452QTRPBF International Rectifier, IRF7452QTRPBF Datasheet

MOSFET N-CH 100V 4.5A 8-SOIC

IRF7452QTRPBF

Manufacturer Part Number
IRF7452QTRPBF
Description
MOSFET N-CH 100V 4.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7452QTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 2.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7452QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7452QTRPBF
Manufacturer:
IR
Quantity:
20 000
These HEXFET
package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
l
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Description
Absolute Maximum Ratings
Typical SMPS Topologies
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
Notes  through † are on page 8
D
D
DM
J
STG
D
GS
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
A
A
A
= 25°C
= 70°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Power MOSFET's in SO-8
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
V
1
2
3
4
100V
Top View
DSS
300 (1.6mm from case )
HEXFET
8
7
6
5
-55 to + 150
R
D
D
D
Max.
D
A
A
0.02
± 30
4.5
3.6
2.5
3.5
36
DS(on)
IRF7452QPbF
0.060Ω
®
Power MOSFET
max
SO-8
Units
W/°C
08/09/10
4.5A
V/ns
°C
W
I
A
V
D
1

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IRF7452QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET's in SO-8 package utilize the lastest processing ...

Page 2

IRF7452QPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 0.1 5.0V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF7452QPbF 100000 0V, C iss = SHORTED C rss = C gd 10000 C oss = 1000 100 Drain-to-Source Voltage ...

Page 5

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 Fig 10. Maximum ...

Page 6

IRF7452QPbF 0. 10V 0. 15V 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µF ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

IRF7452QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 ...

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