STL8NH3LL STMicroelectronics, STL8NH3LL Datasheet

MOSFET N-CH 30V 8A PWRFLAT3.3SQ

STL8NH3LL

Manufacturer Part Number
STL8NH3LL
Description
MOSFET N-CH 30V 8A PWRFLAT3.3SQ
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL8NH3LL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
965pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (3.3 x 3.3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4115-2

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Features
Description
This application specific Power MOSFET is the
latest generation of STMicroelectronics unique
STripFET™ technology. The resulting transistor is
optimized for low on-resistance and minimal gate
charge. The chip-scaled PowerFLAT™ package
allows a significant board space saving, still
boosting the performance.
Applications
Table 1.
September 2009
Improved die-to-footprint ratio
Very low profile package (1mm max)
Very low thermal resistance
Very low gate charge
Low threshold device
In compliance with the 2002/95/EC European
directive
Switching application
STL8NH3LL
Type
STL8NH3LL
Order code
Device summary
N-channel 30 V, 0.012 Ω , 8 A - PowerFLAT™ (3.3x3.3)
V
30V
DSS
ultra low gate charge STripFET™ Power MOSFET
<0.015Ω
R
DS(on)
Marking
8NH3L
8A
Doc ID 10681 Rev 8
I
D
(1)
Figure 1.
PowerFLAT™ (3.3x3.3)
Package
Internal schematic diagram
PowerFLAT™(3.3x3.3)
(Chip Scale Package)
TOP VIEW
STL8NH3LL
Tape and reel
Packaging
www.st.com
1/12
12

Related parts for STL8NH3LL

STL8NH3LL Summary of contents

Page 1

... Table 1. Device summary Order code STL8NH3LL September 2009 R I DS(on) D (1) <0.015Ω 8A Figure 1. Marking 8NH3L PowerFLAT™ (3.3x3.3) Doc ID 10681 Rev 8 STL8NH3LL PowerFLAT™(3.3x3.3) (Chip Scale Package) Internal schematic diagram TOP VIEW Package Packaging Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 10681 Rev 8 STL8NH3LL . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL8NH3LL 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (3) P Total dissipation at T TOT (1) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature ...

Page 4

... = =4 (see Figure 8) f=1 MHz gate DC bias = 0 test signal level = 20mV open drain Parameter Test conditions V = =4.7 Ω (see Figure 14) Doc ID 10681 Rev 8 STL8NH3LL Min. Typ. Max 100 ± = 250 µ 0.012 0.015 = 4 A 0.0135 0.017 D Min. Typ. Max 965 ...

Page 5

... STL8NH3LL Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration= 300 µs, duty cycle 1.5 % Parameter ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 10681 Rev 8 STL8NH3LL ...

Page 7

... STL8NH3LL Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B Doc ID 10681 Rev 8 Electrical characteristics vs temperature VDSS 7/12 ...

Page 8

... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped inductive load test circuit Figure 19. Switching time waveform Doc ID 10681 Rev 8 STL8NH3LL ...

Page 9

... STL8NH3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. Package dimensions Dim mm. Min. Typ Max. 0.80 ...

Page 10

... Package mechanical data Figure 20. Package drawing Figure 21. Recommended footprint (dimensions in mm) 10/12 Doc ID 10681 Rev 8 STL8NH3LL AM03834v1 ...

Page 11

... STL8NH3LL 5 Revision history Table 9. Document revision history Date 21-Jul-2004 05-Oct-2004 19-Oct-2004 22-Nov-2004 21-Feb-2005 18-Apr-2005 14-Mar-2006 10-Sep-2009 Revision 1 First release 2 Values changed 3 New value inserted 4 Document updated 5 Final version Figure 4, Figure 6 Modified 7 New template Figure 21 8 Inserted Doc ID 10681 Rev 8 Revision history Changes 6 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 10681 Rev 8 STL8NH3LL ...

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