IRLR3636TRPBF International Rectifier, IRLR3636TRPBF Datasheet

MOSFET N-CH 60V 50A DPAK

IRLR3636TRPBF

Manufacturer Part Number
IRLR3636TRPBF
Description
MOSFET N-CH 60V 50A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3636TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mohm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 4.5V
Input Capacitance (ciss) @ Vds
3779pF @ 50V
Power - Max
143W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
99A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5.4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR3636TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR3636TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLR3636TRPBF
0
Company:
Part Number:
IRLR3636TRPBF
Quantity:
4 800
Company:
Part Number:
IRLR3636TRPBF
Quantity:
10 000
Company:
Part Number:
IRLR3636TRPBF
Quantity:
32 000
Applications
l
l
l
l
l
Benefits
l
l
l
l
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θJA
θJA
DC Motor Drive
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Optimized for Logic Level Drive
Very Low R
Superior R*Q at 4.5V V
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
@ T
@ T
@ T
SOA
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
DS(ON)
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
at 4.5V V
GS
GS
k
Parameter
Parameter
f
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
e
j
G
Gate
G
D
S
Typ.
See Fig.14, 15, 22a, 22b
–––
–––
–––
300 (1.6mm from case)
IRLR3636PbF
V
R
I
I
D (Silicon Limited)
D (Package Limited)
D-Pak
DSS
DS(on)
-55 to + 175
IRLR3636PbF
IRLU3636PbF
Max.
99
70
0.95
HEXFET Power MOSFET
Drain
396
143
170
±16
50
22
D
c
c
typ.
max.
IRLU3636PbF
Max.
1.05
110
50
I-Pak
Source
5.4m
6.8m
99A
PD - 96224
50A
S
60V
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
02/06/09
1

Related parts for IRLR3636TRPBF

IRLR3636TRPBF Summary of contents

Page 1

Applications DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Benefits Optimized for Logic Level Drive l Very Low R at 4.5V ...

Page 2

IRLR/U3636PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

IRLR/U3636PbF 1000 175°C 100 25° 0.1 0.1 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 110 100 Limited By Package ...

Page 5

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, ...

Page 6

IRLR/U3636PbF 3.0 2.5 2.0 1 100µ 250µA 1 1.0mA ID = 1.0A 0.5 0.0 -75 -50 - 100 125 150 175 Temperature ( °C ) ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 8

IRLR/U3636PbF 5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 ,5)5 $   ,5)5   www.irf.com ...

Page 9

IRLR/U3636PbF 9 ...

Page 10

IRLR/U3636PbF TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...

Related keywords