IRF7805TRPBF International Rectifier, IRF7805TRPBF Datasheet

MOSFET N-CH 30V 13A 8-SOIC

IRF7805TRPBF

Manufacturer Part Number
IRF7805TRPBF
Description
MOSFET N-CH 30V 13A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7805TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
13 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
 Details
Other names
IRF7805PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7805TRPBF
Manufacturer:
IR
Quantity:
20 000
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power
microprocessors.
The IRF7805PbF offers maximum efficiency for
mobile CPU core DC-DC converters.
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
www.irf.com
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
the
latest
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
generation
Parameter
Parameter
c
g
g
of
GS
GS
mobile
@ 10V
@ 10V
HEXFET
®
Chip-Set for DC-DC Converters
Typ.
–––
–––
SO-8
V
R
Qg
Qsw
Qoss
DS
DS(on)
-55 to + 150
Device Features
IRF7805PbF
Max.
0.02
± 12
100
2.5
1.6
30
13
10
IRF7805PbF
30V
11mΩ
31nC
11.5nC
36nC
Max.
20
50
G
S
S
S
1
2
3
4
T o p V ie w
PD – 96031A
Units
Units
W/°C
°C/W
°C
W
V
A
8
7
6
5
D
D
D
D
A
01/09/08
1

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IRF7805TRPBF Summary of contents

Page 1

N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and ...

Page 2

IRF7805PbF Static @ T = 25°C (unless otherwise specified) J Parameter Drain-to-Source Breakdown Voltage BV DSS Static Drain-to-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Total ...

Page 3

Fig 1. Normalized On-Resistance vs. Temperature Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 0.01 Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...

Page 4

IRF7805PbF SO-8 Package Details & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d ...

Page 5

SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For ...

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