IRF7811AVTRPBF International Rectifier, IRF7811AVTRPBF Datasheet

MOSFET N-CH 30V 10.8A 8-SOIC

IRF7811AVTRPBF

Manufacturer Part Number
IRF7811AVTRPBF
Description
MOSFET N-CH 30V 10.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7811AVTRPBF.pdf (6 pages)
2.IRF7811AVTRPBF.pdf (4 pages)

Specifications of IRF7811AVTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1801pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
10.8 A
Gate Charge, Total
17 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
11 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
8.6 ns
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
14 A
Mounting Style
SMD/SMT
Gate Charge Qg
17 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7811AVPBFTR
IRF7811AVTRPBF
IRF7811AVTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7811AVTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRF7811AVTRPBF
Manufacturer:
IR
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7811AVTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7811AVTRPBF
Quantity:
50
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
• 100% R
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
The IRF7811AV offers an extremely low combination of
Q
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
www.irf.com
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
(V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Absolute Maximum Ratings
Thermal Resistance
DS(on)
sw
applications
GS
& R
≥ 4.5V)
, gate charge and Cdv/dt-induced turn-on immunity.
DS(on)
G
Tested
for reduced losses in both control and
Parameter
ÃÃÃÃÃÃÃÃÃÃ
Parameter
™
™
hÃ
h
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
Symbol
T
Symbol
J
R
R
V
V
I
, T
P
I
DM
I
I
SM
θJA
θJL
DS
GS
D
S
D
STG
DEVICE CHARACTERISTICS…
SO-8
R
Q
Q
DS(on)
IRF7811AVPbF
IRF7811AVPbF
Q
Typ
–––
–––
OSS
SW
G
IRF7811AV
-55 to 150
10.8
11.8
±20
100
2.5
3.0
2.5
30
50
G
S
S
S
IRF7811AV
11 mΩ
6.7 nC
8.1 nC
17 nC
Max
50
20
1
2
3
4
Top View
PD-95265
8
7
6
5
Units
Units
°C/W
°C
W
V
A
A
D
D
D
D
A
A
08/17/04
1

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IRF7811AVTRPBF Summary of contents

Page 1

N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% R Tested G • Lead-Free Description This new device employs advanced ...

Page 2

IRF7811AVPbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Switch Charge ...

Page 3

I = 15A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J Figure 1. Normalized On-Resistance vs. Temperature 0.020 0.018 0.016 0.014 0.012 0.010 0.008 3.0 6.0 9.0 V GS, Gate ...

Page 4

IRF7811AVPbF 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 125nS V ds 90% 10 d(on) 4 0.01 0.1 ...

Page 5

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 6

IRF7811AVPbF SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. ...

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