STN3NF06 STMicroelectronics, STN3NF06 Datasheet - Page 7
STN3NF06
Manufacturer Part Number
STN3NF06
Description
MOSFET N-CH 60V 4A SOT-223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STN3NF06.pdf
(12 pages)
Specifications of STN3NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
315pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
3.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4764-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN3NF06
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STN3NF06L
Manufacturer:
TI
Quantity:
4 000
Company:
Part Number:
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Manufacturer:
ST
Quantity:
4 518
Company:
Part Number:
STN3NF06L
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STN3NF06L
Manufacturer:
ST
Quantity:
20 000
STN3NF06
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 8.
Normalized gate threshold voltage
vs. temperature
characteristics
Figure 10. Normalized on resistance vs.
Figure 12. Normalized breakdown voltage vs.
Capacitance variations
temperature
temperature
Electrical characteristics
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