SUM45N25-58-E3 Vishay, SUM45N25-58-E3 Datasheet - Page 3

MOSFET N-CH 250V 45A D2PAK

SUM45N25-58-E3

Manufacturer Part Number
SUM45N25-58-E3
Description
MOSFET N-CH 250V 45A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM45N25-58-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
45A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
62mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM45N25-58-E3
SUM45N25-58-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM45N25-58-E3
Manufacturer:
INTERSIL
Quantity:
5 623
Part Number:
SUM45N25-58-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM45N25-58-E3
0
Company:
Part Number:
SUM45N25-58-E3
Quantity:
2 500
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
7000
6000
5000
4000
3000
2000
1000
150
120
100
90
60
30
80
60
40
20
0
0
0
0
0
0
V
GS
C
10
rss
40
= 10 thru 7 V
V
V
2
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
I
D
20
- Drain Current (A)
Capacitance
80
4
T
C
C
30
C
= - 55 °C
oss
iss
120
6
40
6 V
5 V
160
4 V
8
50
125 °C
25 °C
New Product
200
10
60
0.10
0.08
0.06
0.04
0.02
0.00
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 45 A
On-Resistance vs. Drain Current
30
V
= 125 V
1
GS
20
V
GS
Transfer Characteristics
Q
= 6 V
g
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
60
2
- Drain Current (A)
Gate Charge
40
SUM45N25-58
90
T
Vishay Siliconix
3
C
= 125 °C
25 °C
60
120
4
V
GS
www.vishay.com
= 10 V
80
150
5
- 55 °C
100
180
6
3

Related parts for SUM45N25-58-E3