IRFM120ATF Fairchild Semiconductor, IRFM120ATF Datasheet - Page 5

• Manufacturer Part Number: IRFM120ATF
• Description: MOSFET N-CH 100V 2.3A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of IRFM120ATF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 5.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 28 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 14 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFM120ATFTR

10V
10V
12V
Vary t
required peak I
POWER MOSFET
3mA
N-CHANNEL
p
to obtain
* Current Regulator ”
R
R
G
G
200nF
D
t
p
V
V
Current Sampling (I
in
V
DS
50K!
out
V
GS
Resistor
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
R
1
300nF
Fig 13. Resistive Switching Test Circuit & Waveforms
DUT
DUT
L
I
G
L
D
Fig 12. Gate Charge Test Circuit & Waveform
)
Current Sampling (I
Same Type
DUT
R
as DUT
C
L
Resistor
( 0.5 rated V
R
2
V
DD
V
DD
D
DS
)
V
)
DS
V
V
BV
10V
V
GS
out
V
in
DSS
I
DD
AS
10%
90%
E
Q
AS
t
d(on)
gs
=
t
----
on
1
2
t
r
L
L
Q
I
Q
I
D
g
AS
gd
(t)
t
Charge
p
2
IRFM120A
--------------------
BV
BV
DSS
t
d(off)
DSS
t
-- V
off
t
f
DD
Time
V
DS
(t)