FDFMA2N028Z Fairchild Semiconductor, FDFMA2N028Z Datasheet - Page 5

• Manufacturer Part Number: FDFMA2N028Z
• Description: MOSFET N-CH 20V 3.7A MLP2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2N028Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2N028ZTR

FDFMA2N028Z Rev.B1
Typical Characteristics
Figure 11.
0.001
0.01
0.01
10
0.1
0.1
Figure 7.
10
20
10
8
6
4
2
0
1
1
0.1
0
0
I
D
r
V
SINGLE PULSE
R
T
DS(on)
Figure 9.
GS
A
θ
= 3.7A
JA
=
=4.5V
T
=
25
173
J
V
LIMIT
Schottky Diode Forward Current
= 125
o
DS
V
2
C
Gate Charge Characteristics
V
o
C/W
, DRAIN to SOURCE VOLTAGE (V)
F,
DD
200
Operating Area
FORWARD VOLTAGE(mV)
o
Q
= 5V
C
g
Forward Bias Safe
, GATE CHARGE(nC)
T
J
1
= 25
4
o
T
C
400
J
V
= 85
DD
T
J
= 10V
6
o
= 25°C unless otherwise noted
C
V
DD
10
600
= 15V
8
100ms
1s
10s
10ms
100us
1ms
DC
10
800
60
5
Figure 12.
0.001
1000
0.01
100
100
0.1
50
40
30
20
10
10
10
Figure 8.
10
0
1
0.1
Figure 10.
0
-4
f = 1MHz
V
GS
10
V
= 0V
-3
DS
5
Schottky Diode Reverse Current
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance Characteristics
V
10
Single Pulse Maximum
t, PULSE WIDTH (s)
R
, REVERSE VOLTAGE (V)
-2
10
SINGLE PULSE
10
1
-1
15
10
0
C
C
C
20
iss
oss
rss
10
SINGLE PULSE
R
T
T
T
T
A
J
θ
J
J
1
JA
=25
= 85
= 125
= 25
= 173
www.fairchildsemi.com
o
C
o
o
25
10
C
o
C
10
C
2
o
C/W
20
10
30
3