ZXM61N02FTA Diodes Zetex, ZXM61N02FTA Datasheet - Page 2

• Manufacturer Part Number: ZXM61N02FTA
• Description: MOSFET N-CH 20V 1.7A SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXM61N02FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 930mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 15V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXM61N02FTR

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
ZXM61N02F
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
I
I
P
P
V
I
I
T
2
D
DM
S
SM
SYMBOL
R
R
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
625
806
200
155
1.7
1.3
7.4
0.8
7.4
6.4
20
5
12
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
V
V
A
A
A
A