FDC634P Fairchild Semiconductor, FDC634P Datasheet

FDC634P

Manufacturer Part Number

FDC634P

Description

MOSFET P-CH 20V 3.5A SSOT-6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDC634P.pdf (5 pages)

Specifications of FDC634P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 3.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.5A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

10nC @ 4.5V

Input Capacitance (ciss) @ Vds

779pF @ 10V

Power - Max

800mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.08 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

11 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

3.5 A

Power Dissipation

1500 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

-3.5A

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

80mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-800mV

Rohs Compliant

Yes

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.08Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±8V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC634PTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDC634P

Manufacturer:

FAIRCHILD

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC634P

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDC634P-NL

Manufacturer:

Quantity:

250

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC634P-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC634P_NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (137Kb)

FDC634P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

Applications

2001 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

Battery management

Load switch

Battery protection

DSS

GSS

, T

J C

Device Marking

STG

P-Channel

.634

SuperSOT -6

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

2.5V

specified

– Continuous

– Pulsed

FDC634P

Device

Parameter

MOSFET

=25

uses

C unless otherwise noted

Reel Size

7’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1)

Features

–3.5 A, –20 V. R

Low gate charge (7.2 nC typical)

High performance trench technology for extremely

low R

DS(ON)

Tape width

–55 to +150

Ratings

8mm

DS(ON)

–3.5

–20

1.6

0.8

= 80 m @ V

= 110 m @ V

September 2001

FDC634P Rev E (W)

3000 units

Quantity

= –4.5 V

= –2.5 V

Units

C/W

Related parts for FDC634P

FDC634P Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ September 2001 = –4.5 V DS(ON 110 –2.5 V DS(ON Ratings Units – –3.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC634P Rev E (W) ...

Page 2

... Min Typ Max Units –20 V –12 mV/ C –1 100 nA –100 nA –0.4 –0.8 –1 mV 110 77 130 =125 C J – 779 pF 121 7 1.7 nC 1.5 nC –1.3 A –0.8 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC634P Rev E(W) A ...

Page 3

... C 0.1 0.01 0.001 0.0001 2 2.5 0 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC634P Rev E( ...

Page 4

... Figure 8. Capacitance Characteristics 100 s 1ms 0.01 10 100 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 1000 FDC634P Rev E(W) ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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