2N7002TA Diodes Zetex, 2N7002TA Datasheet

MOSFET N-CH 60V 115MA SOT23-3

2N7002TA

Manufacturer Part Number
2N7002TA
Description
MOSFET N-CH 60V 115MA SOT23-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheets

Specifications of 2N7002TA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
330mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
7.5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
115mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Power Dissipation
300mW
Continuous Drain Current
115mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
2N7002TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002TA
Manufacturer:
ZTX
Quantity:
375 000
Part Number:
2N7002TA
Manufacturer:
ZETEX
Quantity:
586
2N7002
60V SOT23 N-channel enhancement mode MOSFET
Summary
Description
A small signal MOSFET for general purpose switching applications.
Features
Applications
Ordering information
Device marking
702
Issue 5 - October 2007
© Zetex Semiconductors plc 2007
V
Device
2N7002
(BR)DSS
Fast switching speed
Low gate drive capability
SOT23 package
General switching applications
60
7.5 @ V
7.5 @ V
R
DS(on)
Reel size
(inches)
GS
7
GS
( )
= 10V
= 5V
Tape width
(mm)
8
I
D
0.05
0.5
(A)
1
Quantity per reel
3,000
D
G
Top view
www.zetex.com
D
S
G
S

Related parts for 2N7002TA

2N7002TA Summary of contents

Page 1

SOT23 N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 7 10V Description A small signal MOSFET for general purpose switching applications. Features • Fast ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Continuous drain current at T Pulsed drain current Gate-source voltage Power dissipation at T =25°C amb Operating and storage temperature range Electrical characteristics (at T Parameter Drain-source breakdown voltage BV Gate-source threshold voltage Gate-body ...

Page 3

SOT23 Package outline leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 c 0.085 0.20 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. Approximate ...

Page 4

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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