NDS0610 Fairchild Semiconductor, NDS0610 Datasheet - Page 4
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NDS0610
Manufacturer Part Number
NDS0610
Description
MOSFET P-CH 60V 120MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS0610.pdf
(5 pages)
Specifications of NDS0610
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
2.5nC @ 10V
Input Capacitance (ciss) @ Vds
79pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.12 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS0610TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS0610
Manufacturer:
FSC
Quantity:
273 000
Part Number:
NDS0610
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS0610-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Typical Characteristics
0.001
0.01
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
1
0.001
I
0.01
D
SINGLE PULSE
R
0.1
R
= -0.5A
0.0001
DS(ON)
V
JA
1
T
GS
A
= 350
= 25
= -10V
LIMIT
0.4
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
g
, GATE CHARGE (nC)
0.8
0.001
DC
10
V
10s
DS
Figure 11. Transient Thermal Response Curve.
= -12V
1.2
1s
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
100ms
10ms
-48V
0.01
1.6
1ms
100us
-24V
100
2
0.1
t
1
, TIME (sec)
100
80
60
40
20
0
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
1
RSS
10
C
-V
OSS
0.1
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
20
10
t
1
C
, TIME (sec)
ISS
30
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
40
(t) = r(t) * R
100
A
= 350
t
1
= P * R
SINGLE PULSE
R
t
2
10
JA
T
A
= 350°C/W
f = 1 MHz
V
o
= 25°C
GS
C/W
50
NDS0610 Rev B(W)
JA
= 0 V
1
JA
(t)
/ t
2
1000
100
60