IRF7341QTRPBF International Rectifier, IRF7341QTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7341QTRPBF
• Description: MOSFET N-CH DUAL 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7341QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7341QTRPBFCT

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100
0.1
10
100
1
10
0.1
1
2.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
V
V DS , Drain-to-Source Voltage (V)
3.0
GS
T = 25 C
J
, Gate-to-Source Voltage (V)
1
°
4.0
2.7V
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
T = 175 C
5.0
J
DS
10
= 25V
TOP
BOTTOM
°
6.0
10.0V
VGS
15.0V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
100
7.0
100
0.1
10
1
2.5
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I =
D
5.2A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
Tj = 175°C
2.7V
10
TOP
BOTTOM
V
°
GS
=
VGS
10.0V
15.0V
7.0V
5.5V
4.5V
4.0V
3.5V
10V
2.7V
3
100